PART |
Description |
Maker |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. Transistors
|
Usha India Ltd.
|
HC5503C HC5503CCB HC5503CCP |
Unbalanced PBX/Key System SLIC, Subscriber Line Interface Circuit Unbalanced PBX/Key System SLIC/ Subscriber Line Interface Circuit Bipolar Transistor; Collector Emitter Voltage, Vceo:50V; Transistor Polarity:NPN; Power Dissipation:900mW; DC Current Gain Min (hfe):180; Collector Current:500A; Package/Case:3-TO-92
|
INTERSIL[Intersil Corporation]
|
SL74HC245 SL74HC245D SL74HC245N HC245 |
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.2W; DC Current Gain Min (hfe):20; Collector Current:0.5A; Power (Ptot):200mW Octal 3-State Noninverting Bus Transceiver
|
System Logic Semiconductor Co., Ltd. SLS[System Logic Semiconductor]
|
KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS
|
ON Semiconductor
|
2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor Bipolar Transistor Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
BC369 C62702-C748 |
From old datasheet system PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB |
16M x 4-Bit Dynamic RAM High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
|
Siemens Semiconductor Group SIEMENS AG Infineon Technologies AG
|
CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|